The band gap in eV of Ge at 300K is:
A. 1.68 eV
B. 0.66 eV
C. 0.56 eV
D. <p>1.12 eV</p>
Please scroll down to see the correct answer and solution guide.
Right Answer is: B
SOLUTION
The bandgap energy (Eg) in the minimum energy required to break a covalent bond and thus, generates an electron-hole pair.
The energy gap is the shortest distance between the valence layer and the conduction layer.
The Energy required for a photon to create an e-h pair is a little bit larger than band-gap in the case of indirect band-gap semiconductor
Comparison of different semiconductor bandgaps is as shown:
|
Semiconductor Materials |
||
|
Material |
Chemical Symbol |
Bandgap Energy (eV) 300K |
|
Germanium |
Ge |
0.66 |
|
Silicon |
Si |
1.1 |
|
Gallium Arsenide |
GaAs |
1.4 |
|
Cadmium Sulphate |
CdS |
2.4 |
|
Silicon Carbide |
SiC |
3.3 |
\({E_G} \propto \frac{1}{{Temperature}}\)
i.e. Energy Gap decreases with the temperature increase
Mathematically, this relation is given by:
EG(T) = (EG0 – β0T) eV
EG0 – Bandgap energy at OK
β0 – material constant eV/°K
